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| (R) BUL57 BUL57FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s s s s s s STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTORS HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC LARGE RBSOA TO-220FP FULLY ISOLATED PACKAGE (U.L. COMPLIANT) 1 2 3 1 2 3 TO-220 TO-220FP APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES DESCRIPTION The devices are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds. The devices are designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter BUL57 Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) o Total Dissipation at Tc = 25 C St orage Temperature Max. Operating Junction Temperature 700 400 9 8 16 4 7 85 -65 to 150 150 35 Value BUL57FP V V V A A A A W o C o C 1/7 Uni t January 1999 BUL57 / BUL57FP THERMAL DATA TO-220 R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.47 62.5 TO-220F P 3.5 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO V CEO(sus) V EBO V CE(sat ) Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Collector-Emitter Sustaining Voltage Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Test Cond ition s V CE = 700 V V CE = 700 V V EC = 400 V I C = 100 mA I E = 10 mA IC IC IC IC IC = = = = = 2 3 4 5 8 A A A A A IB IB IB IB IB = = = = = 0.4 A 0.6 A 0.8 A 1A 2A L = 25 mH 400 9 0.65 0.75 1.2 2 2 1.2 1.6 15 6 8 1.8 60 2.6 110 1 54 1.5 90 1.6 100 40 Tj = 125 C o Min. Typ . Max. 100 500 250 Un it A A A V V V V V V V V V V BE(s at) h F E Base-Emitt er Saturation Voltage DC Current Gain IC = 2 A IC = 5 A IC = 2 A IC = 4 A I C = 10 mA IC = 3 A I B1 = 0.6 A L = 200 H IC = 3 A I B1 = 0.6 A L = 200 H IB = 0.4 A IB = 1 A VCE = 5 V VCE = 5 V VCE = 5 V V CL = 250 V I B2 = -1.2 A V CL = 250 V I B2 = -1.2 A o Tj = 125 C IB1 = 0.6 A R BB = 0 L = 200 H IB1 = 0.6 A R BB = 0 L = 200 H IC = 2 A IB2 = -0.4 A ts tf ts tf ts tf ts tf INDUCTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time RESISTIVE LO AD Storage Time Fall Time 2.6 110 s ns s ns s ns s ns IC = 3 A V BE(of f) = -5 V V CL = 250 V IC = 3 A V BE(of f) = -5V V CL = 250 V o T j = 125 C V CC = 300 V I B1 = 0.4 A Tp = 30 s ts tf 3 4.2 350 ms ns Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/7 BUL57 / BUL57FP Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BUL57 / BUL57FP Inductive Fall Time Inductive Storage Time Resistive Fall Time Resistive Load Storage Time Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuit 1) Fast electronic switc h 2) Non-inductive Resistor 3) Fast recovery Rect ifier 4/7 BUL57 / BUL57FP TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 5/7 BUL57 / BUL57FP TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 F D G1 E H F2 123 L2 L4 6/7 G BUL57 / BUL57FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 7/7 |
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